4H-SiC肖特基势垒二极管,4H-SiC SBD(Schottky-barrier diode)
1)4H-SiC SBD(Schottky-barrier diode)4H-SiC肖特基势垒二极管
英文短句/例句
1.Gamma-ray radiation effect on Ni/4H-SiC SBDNi/4H-SiC肖特基势垒二极管的γ射线辐照效应
2.The Fabrication of Au/4H-SiC Semitransparent Schottky UV Photodiode;Au/4H-SiC半透明肖特基UV光电二极管的研制
3.schottky barrier photodiode肖特基势垒光电二极管
4.Schottky-barrier avalanche photodiode肖特基势垒雪崩光电二极管
5.A STUDY ON STATIC I-V CHARACTERISTICS FOR SILICON CARBIDE SCHOTTKY BARRIER DIODES;碳化硅肖特基势垒二极管静态特性的研究
6.Effects of High-temperature Electron Irradiation in n-GaN Schottky Barrier Diode;n-GaN肖特基势垒二极管的高温电子辐照效应
7.Studies of Characteristics of 6H-Sic Schottky Diodes;6H-SiC肖特基二极管的特性研究
8.Study on Radiation Hardness of 4H-SiC PiN Diodes4H-SiC PiN二极管抗辐照特性研究
9.As an example, Schottky barrier diode characteristics is simulated using this method.以肖特基势垒二极管为例，应用该方法，实现了高接触势垒情形下的正反向电流模拟。
10.The Theoretical and Experimental Study for 6H-SiC Schottky Barrier Source/Drain MOSFET;6H-SiC肖特基势垒源漏MOSFET理论和实验的研究
11.Study of 4H-SiC Merged PiN/Schottky(MPS) Diodes;4H-SiC混合PiN/Schottky（MPS）二极管的研究
12.Study on Characteristics of 4H-SiC npn Bipolar Transistor;4H-SiC npn双极晶体管特性研究
13.In this paper, a new method of complete calibration of six-portmeasurement system is presented which uses the low-barrier Schottky diode detectors for power detection.本文提出了用肖特基低势垒二极管检波器检测功率的六端口测量系统整体校准的新方法。
14.low-power Schottky diode低功率肖特基二极管
15.schottky gate fet肖特基势垒栅场效应晶体管
16.enhancement type schottky barrier fet增强型肖特基势垒场效应晶体管
17.Research and Fabrication of 4H-SiC Ultraviolet p-i-n Photodiodes and Linear Array;p-i-n结构4H-SiC紫外光电二极管单管及一维阵列的研制
18.silicon high-current Schottky barrier switching diode硅大电流肖特基开关二极管
相关短句/例句
SiC-Based Schottky Barrier DiodeSiC肖特基势垒二极管
1.Application of Power Factor Correction Circuits withSiC-Based Schottky Barrier Diode;SiC肖特基势垒二极管在PFC电路中的应用
3)4H-SiC JBS(junction barrier schottky)4H-SiC结势垒肖特基
4)Schottky barrier diode肖特基势垒二极管
1.I-V characteristics of 4H-SiCSchottky barrier diodes under high temperature;高温Ti/4H-SiC肖特基势垒二极管的特性
2.The whole circuit uses low power consumption and low voltage parts such as a new high speed digital optical-coupler HCPL-060L andSchottky barrier diode etc.介绍了RS-232接口与RS-485接口无源光电隔离转换器的设计,采用简单实用的串口窃电技术,整个电路使用了新型高速数字光电耦合器HCPL-060L、肖特基势垒二极管等低功耗、低工作电压的元器件,并详细说明了硬件的设计。
3.Th eSchottky barrier diodes are fabricated during the 6H-SiC epilayers grow n by using chemical vapor deposition on commercially available single-crystal 6 H-SiC wafers.在可商业获得的 N型 6 H - Si C晶片上 ,通过化学气相淀积 ,进行同质外延生长 ,在此结构材料上 ,通过热蒸发 ,制作 Ni/6 H- Si C肖特基势垒二极管 。
5)Low barrier Schottky diode detector肖特基低势垒二极管
6)SBD肖特基势垒二极管
1.In addition, we fabricated Au and Ni Schottky Barrier Diodes (SBDs) on Silicon surface of n-type 6H-SiC.本文讨论了n型6H-SiC欧姆接触的制备工艺及其基本电学及热学特性，并在此基础上采用金属Au及Ni在n型6H-SiC硅面(0001晶向)上制备了具有一定特性的肖特基势垒二极管。
延伸阅读
[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]分子式：C16H16ClN3O3S分子量：365.5CAS号：26807-65-8性质：暂无制备方法：暂无用途：用于轻、中度原发性高血压。
